Deposition Systems for Compound Semiconductors
150/200 mm high throughput epitaxy
for GaN power & RF applications
.
3x on-wafer uniformity improvement*
at lowest particle level for all wafers
(within run, run-to-run, chamber-to-chamber)
>25% lower epi cost than any other platform
Single wafer performance at lowest batch processing cost
FAST CHARGER
Source: https://www.digitalcameraworld.com/buying-guides/best-gan-charger
DATA CENTER
Source: https://www.datacenterknowledge.com
SOLAR MICRO INVERTER
Source: https://www.solarreviews.com
Source: Yole Power GaN © 2023
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Alan Tai
Taiwan/Singapore
Christof Sommerhalter
USA
Christian Geng
Europe
Hisatoshi Hagiwara
Japan
Nam Kyu Lee
South Korea
Wei (William) Song
China
AIXTRON SE (Headquarters)
AIXTRON 24/7 Technical Support Line
AIXTRON Europe
AIXTRON Ltd (UK)
AIXTRON K.K. (Japan)
AIXTRON Korea Co., Ltd.
AIXTRON Taiwan Co., Ltd. (Main Office)
AIXTRON Inc. (USA)
Laura Preinich
Recruiter
Tom Lankes
Talent Acquisition Expert - Ausbildungsleitung
Christoph Pütz
Senior Manager ESG & Sustainability
Christian Ludwig
Vice President Investor Relations & Corporate Communications
Ralf Penner
Senior IR Manager
Prof. Dr. Michael Heuken
Vice President Advanced Technologies
Christian Ludwig
Vice President Investor Relations & Corporate Communications