EpiGaN expands GaN Power Production with AIX G5+ C

AIXTRON SE (FSE: AIXA), a worldwide leading provider of deposition equipment to the semiconductor industry, today announced that EpiGaN has ordered an AIX G5+ C MOCVD system to boost its manufacturing capability of large diameter GaN-on-Si¹ and GaN-on-SiC² epiwafers. The Belgian company focuses on GaN-on-Si and GaN-on-SiC material product solutions for next-generation semiconductor devices for telecom, power electronics, and sensor applications.

The new AIXTRON AIX G5+ C reactor will be installed and operational in Q1/2019 at EpiGaN’s manufacturing site in Hasselt/Belgium. The fully automated Planetary® MOCVD system features in-situ chamber cleaning and enables configurations of 8x6 inch or 5x8 inch epitaxial wafers to be automatically loaded and removed by a cassette-to-cassette wafer transfer module.

"The demand of our global customer base for GaN product solutions is boosting. Our key customers are getting ready to launch and scale-up products based on our GaN RF-power technology which is optimized for 5G broadband network applications. With AIXTRON’s AIX G5+ C Planetary® system, EpiGaN will increase its capacity for 150mm and 200mm product solutions to scope the increasing market demand,” says EpiGaN co-founder and CEO Dr. Marianne Germain. “AIXTRON’s Planetary® system combines excellent on-wafer uniformity and run-to-run performance at the lowest cost of ownership – attributes that are critical to serve our customer base with products of exceptional performance and at the right price point.“

Dr. Felix Grawert, President of AIXTRON, commented: “We are confident the AIX G5+ C will support EpiGaN’s demanding requirements for high-quality, cost-effective production of GaN epitaxial wafers as our tool meets the highest standards in terms of uniformity and particle density.”

Just recently EpiGaN has released large-diameter versions of its HVRF (High Voltage Radio Frequency) GaN-on-Si, as well as GaN-on-SiC wafer product families tailored towards demanding 5G applications needs. With the new AIX G5+ C MOCVD system from AIXTRON, EpiGaN expects to quickly scale up and spread out its differentiating technology solutions to the global market.

¹ GaN-on-Si = Gallium Nitride-on-Silicon, 2 GaN-on-SiC = Gallium Nitride-on-Silicon Carbide

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