17. November 2011 | Compound Semiconductors
AIXTRON SE today announced that Xiang Nang Hualei Optoelectronics Ltd, of Hunan Province, China, has ordered eight new AIXTRON MOCVD reactors to boost capacity for GaN HB LEDs. The order includes six CRIUS II reactors in a 55x2-inch wafer configuration and two AIX G5 HT 56x2-inch wafer configuration systems.
A local AIXTRON service team has installed and commissioned the new systems in Hualei Optoelectronics´ state-of-the-art facility in Chenzhou, China.
Previously in 2009, Hualei Optoelectronics placed AIXTRON’s largest ever single order for MOCVD systems from China at that time with multiple CRIUS MOCVD systems.
A spokesperson from Hualei Optoelectronics comments: "The acquisition of further AIXTRON MOCVD reactors represents another step in our shift away from an earlier reliance on heavy industry towards high-tech. Entering the high brightness LED business was our strategic target and by working closely with AIXTRON Hualei has achieved its goals quickly and efficiently. Hualei is completely satisfied with the AIXTRON Close Coupled Showerhead technology we used in Phase 1 of our GaN HB LED program and that is why we will continue to choose AIXTRON systems for our next expansion phases. The professional and responsive service we receive from the local AIXTRON team will further guarantee our success.”
Dr. Bastian Marheineke, Vice President Sales at AIXTRON, adds: "AIXTRON was the first company to install a commercial MOCVD reactor in China and since then we have enjoyed excellent relations with the leading institutes and companies. So it is with great pleasure that we announce this repeat order from Hualei. It not only reaffirms the ongoing enthusiasm for investment in new technology in China but also reflects the continued trust in AIXTRON based process technology and support."
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