AIXTRON's New Generation AIX G5 System achieves aggressive productivity targets at Epistar

AIXTRON AG / Product Launch/Alliance

22.02.2010 08:32

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The issuer / publisher is solely responsible for the content of this announcement.

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AIXTRON's New Generation AIX G5 System achieves aggressive productivity
targets at Epistar

Aachen/Germany and Hsinchu/Taiwan, February 22, 2010 - AIXTRON AG (FSE:
AIXA, ISIN DE000A0WMPJ6; NASDAQ: AIXG, ISIN US0096061041) today announced
that its next generation MOCVD Platform AIX G5 HT has demonstrated high
quality GaN deposition at very high growth rates and high pressure above
600mbar and superior GaN/InGaN uniformities. The epitaxial runs were
performed at Epistar Corporation, located in the Hsinchu Science-based
Industrial Park, Taiwan consecutively without reactor baking or swapping of
any parts. The MOCVD reactor is now being transferred into mass production.

The Next Generation Platform AIX G5 HT provides the largest wafer capacity
(56x2' / 14x4' / 8x6') and comes with revolutionary new reactor design
features that allow high growth rates and consecutive runs without baking
or swapping of parts. In total, this results in a more than doubled high
quality throughput compared to the previous generation.

The new reactor design provides highest process flexibility combined with
superior process stability. AIX G5 HT systems provide fastest time to
production with highest reproducibility from tool-to-tool, which enables a
faster production ramp up as compared to any other reactor, with easy
copy-and-paste process transfer, a key factor in a rapidly booming market
with limited numbers of available process experts.

Dr. Ming-Jiunn Jou, President of Epistar, comments: 'AIXTRON was committed
to the challenging targets for the new reactor when we started our
cooperation. Now we are amazed how quickly AIXTRON has met its commitments.
Furthermore, the uniformities seen so far have given us confidence to
significantly improve our production yield on this new MOCVD reactor. We
are now very keen to bring this new tool into production and to benefit
from its improvements.'

Gerd Strauch, Vice President Corporate Product Design & Engineering, and
responsible for Planetary Reactor(R) Development at AIXTRON AG comments: 'I
am very pleased to see this fast progress at Epistar, as it is in
accordance with our expectations. It confirms the excellent target-oriented
design of our new reactor chamber, and it is a proof of our advanced CFD
modelling and system qualification at our own laboratory. We have
successfully transferred the epitaxial growth performance from our
laboratory 1:1 to the system at Epistar's site.'

For further information on AIXTRON AG (FSE: AIXA, ISIN DE000A0WMPJ6;
NASDAQ: AIXG, ISIN US0096061041) please consult our website at:
www.aixtron.com.

Forward-Looking Statements
This news release may contain forward-looking statements about the
business, financial condition, results of operations and earnings outlook
of AIXTRON within the meaning of the 'safe harbor' provisions of the United
States Private Securities Litigation Reform Act of 1995. Words such as
'may', 'will', 'expect', 'anticipate', 'contemplate', 'intend', 'plan',
'believe', 'continue' and 'estimate', and variations of these words and
similar expressions, identify these forward-looking statements. The
forward-looking statements reflect our current views and assumptions and
are subject to risks and uncertainties. You should not place undue reliance
on the forward-looking statements. The following factors, and others which
are discussed in AIXTRON's public filings and submissions with the U.S.
Securities and Exchange Commission, are among those that may cause actual
and future results and trends to differ materially from our forward-looking
statements: actual customer orders received by AIXTRON; the extent to which
chemical vapor deposition, or CVD, technology is demanded by the market
place; the timing of final acceptance of products by customers; the
financial climate and accessibility of financing; general conditions in the
thin film equipment market and in the macro-economy; cancellations,
rescheduling or delays in product shipments; manufacturing capacity
constraints; lengthy sales and qualification cycles; difficulties in the
production process; changes in semiconductor industry growth; increased
competition; exchange rate fluctuations; availability of government
funding; variability and availability of interest rates; delays in
developing and commercializing new products; general economic conditions
being less favorable than expected; and other factors. The forward-looking
statements contained in this news release are made as of the date hereof
and AIXTRON does not assume any obligation to update or revise any
forward-looking statements, whether as a result of new information, future
events or otherwise, unless required by law.

Contact:
Investor Relations and Corporate Communications
AIXTRON AG, Kaiserstr. 98, 52134 Herzogenrath, Germany
Phone: +49 241 8909 444, Fax: +49 241 8909 445, invest@aixtron.com
www.aixtron.com




22.02.2010 Ad hoc announcement, Financial News and Media Release distributed by DGAP.
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Language:     English
Company:      AIXTRON AG
              Kaiserstr. 98
              52134 Herzogenrath
              Deutschland
Phone:        +49 (241) 8909-444
Fax:          +49 (241) 8909-445
E-mail:       invest@aixtron.com
Internet:     www.aixtron.com
ISIN:         DE000A0WMPJ6, US0096061041
WKN:          A0WMPJ
Indices:      TecDAX
Listed:       Regulierter Markt in Frankfurt (Prime Standard); Freiverkehr
              in Berlin, München, Düsseldorf, Stuttgart; Terminbörse EUREX;
              Foreign Exchange(s) Nasdaq
 
End of News                                     DGAP News-Service
 
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