United Silicon Carbide to Develop Next Generation SiC Devices with AIXTRON SiC Planetary Reactor Technology

Dr. John Hostetler, Director of Engineering at USCi, comments: “Having evaluated the market for SiC epitaxy equipment, and based upon our success with merchant SiC epitaxy vendors utilizing similar tools, we have selected the AIXTRON VP2400HW system for the superior quality of both n- and p-type SiC epitaxial layers. The versatility of the 2400 system will enable USCi to rapidly develop novel device designs. The system’s ability to achieve high growth rates make it an ideal platform to develop our next generation high voltage (5-15kV) SiC devices with thicknesses in excess of 100 microns.  AIXTRON Planetary Reactors are becoming the standard for high volume SiC device production and our ownership of a 2400 will greatly facilitate our production process transfer to our merchant epitaxial wafer partners.” 

Dr. Frank Wischmeyer, Vice President and Managing Director, AIXTRON AB, Sweden adds: “Our SiC Planetary Reactor® technology has continued to evolve over the past 10 years.  Our extensive experience and know-how in the SiC deposition process is evident in the current design. AIXTRON is pleased to partner with United Silicon Carbide as they advance SiC materials into next generation devices.”

About AIXTRON

AIXTRON SE is a leading provider of deposition equipment to the semiconductor industry. The Company's technology solutions are used by a diverse range of customers worldwide to build advanced components for electronic and opto-electronic applications based on compound, silicon, or organic semiconductor materials and more recently carbon nanostructures. Such components are used in display technology, signal and lighting technology, fiber communication networks, wireless and cell telephony applications, optical and electronic data storage, computer technology as well as a wide range of other high-tech applications.

About United Silicon Carbide, Inc.

United Silicon Carbide, inc. is a semiconductor company specializing in the development of high efficiency Silicon Carbide (SiC) devices including Schottky Barrier Diodes, JFETs, BJTs, Solid State Circuit Breakers, Power Modules, and Custom SiC integrated circuits.  USCi technology and products enable affordable power efficiency in key markets that will drive the new and greener economy. These include: wind and solar power generation, energy storage, electrification of transportation, emerging Smartgrid technologies that are adding intelligence to our power grid, motor control, and numerous other applications that require higher efficiency, compact designs, and demanding thermal constraints.

Our registered trademarks: AIXACT®, AIXTRON®, Atomic Level Solutions®, Close Coupled Showerhead®, CRIUS®, EXP®, EPISON®, Gas Foil Rotation®, Optacap™, OVPD®, Planetary Reactor®, PVPD®, STExS®, Trijet®