Korea´s LG Electronics receives AIXTRON G5 system for GaN/Si applications

The contract also includes a cooperation agreement in order to optimize LGE´s GaN/Si processes and to accelerate its proprietary device-oriented production.

The reactor was ordered in the first quarter of 2011 and following delivery in the third quarter of 2011 will be installed and commissioned by a local AIXTRON service support team alongside the company’s already existing AIXTRON MOCVD systems at a state-of-the-art facility in South Korea.

LGE will develop power electronic devices offering the best combination of performance and cost demanded by markets such as home appliances and electric vehicles.

AIXTRON equipment is particularly well suited for customers such as LGE who plan to transition from R&D to mass production. LGE’s application will also benefit from the excellent thickness uniformity across the wafers and across the plater as well as run-to-run dependability.

Overall, the AIX G5 is the appropriate choice to fulfil the needs for LGE’s special process parameters and device structure. It will also directly address the requirements for large-wafer process developments right from the start. The mutual trust arising from many years of cooperation between LGE and AIXTRON will now continue through the new partnership for this GaN-on-Si project which will involve all of their professional expertise in the installation and process development. In due course, the joint development project will be a great success further proving LGE’s leadership in GaN-on-Si technology, something that has the potential for great change across the nitride industry.

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